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au.\*:("GARNER CM")

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EFFECTS OF NONUNIFORM ILLUMINATION ON THE PERFORMANCE OF SILICON CONCENTRATOR SOLAR CELLSGARNER CM; NASBY RD.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 437-442; BIBL. 6 REF.Conference Paper

OPTIMIZATION OF A PHOTOVOLTAIC RECEIVER FOR A PARABOLIC TROUGH CONCENTRATORGARNER CM; BIGGS F.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 743-748; BIBL. 3 REF.Conference Paper

PROCESS FOR HIGH PHOTOCURRENT IN IBC SOLAR CELLSSEXTON FW; GARNER CM; RODRIGUEZ JL et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2624-2628; BIBL. 6 REF.Article

AN INTERDIGITATED BACK CONTACT SOLAR CELL WITH HIGH-CURRENT COLLECTIONGARNER CM; NASBY RD; SEXTON FW et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 12; PP. 256-258; BIBL. 5 REF.Article

CHEMISORPTION AND OXIDATION STUDIES OF THE (110) SURFACES OF GAAS, GASB, AND INPPIANETTA P; LINDAU I; GARNER CM et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 6; PP. 2792-2806; BIBL. 43 REF.Article

HIGH EFFICIENCY SILICON CELLS FOR LUMINESCENT SOLAR CONCENTRATORSGARNER CM; SEXTON FW; NASBY RD et al.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 4; NO 1; PP. 37-46; BIBL. 12 REF.Article

OXIDATION PROPERTIES OF GAAS (110) SURFACES.PIANETTA P; LINDAU I; GARNER CM et al.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 37; NO 17; PP. 1166-1169; BIBL. 14 REF.Article

VALENCE BAND STUDIES OF CLEAN AND OXYGEN EXPOSED GAAS (110) SURFACES.PIANETTA P; LINDAU I; GREGORY PE et al.1978; SURF. SCI.; NETHERL.; DA. 1978; VOL. 72; NO 2; PP. 298-320; BIBL. 24 REF.Article

INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONSGARNER CM; SU CY; SHEN YD et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3383-3389; BIBL. 29 REF.Article

ABRUPT GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONDUPUIS RD; DAPKUS PD; GARNER CM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 5; PP. 335-337; BIBL. 19 REF.Article

ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SIGARNER CM; LINDAU I; SU CY et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 8; PP. 3944-3956; BIBL. 37 REF.Article

FUNDAMENTAL STUDIES OF III-V SURFACES AND THE (III-V)-OXIDE INTERFACESPICER WE; LINDAU I; PIANETTA P et al.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 1-18; BIBL. 39 REF.Article

OXIDATION PROPERTIES OF GAAS (110) SURFACES.LUDEKE R; PIANETTA P; LINDAU I et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 12; PP. 5598-5602; BIBL. 27 REF.Article

EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB.CHYE PW; LINDAU I; PIANETTA P et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 17; NO 6; PP. 2682-2684; BIBL. 7 REF.Article

DO THE AU 5D-BANDS NARROW AT THE SURFACE: COMPARISON WITH AU ALLOYS.CHYE PW; LINDAU I; PIANETTA P et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 63; NO 3; PP. 387-389; BIBL. 12 REF.Article

MINIMUM AI0.5 GA0.5 AS-GAAS HETEROJUNCTION WIDTH DETERMINED BY SPUTTER-AUGER TECHNIQUESGARNER CM; SU CY; SPICER WE et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 9; PP. 610-611; BIBL. 6 REF.Article

AUGER PROFILING OF "ABRUPT" LPE ALXGA1-X AS-GAAS HETEROJUNCTIONS.GARNER CM; SHEN YD; KIM JS et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3147-3149; BIBL. 12 REF.Article

PHOTOEMISSION STUDIES OF THE SILICON-GOLD INTERFACEBRAICOVICH L; GARNER CM; SKEATH PR et al.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 12; PP. 5131-5141; BIBL. 50 REF.Article

AUGER DEPTH PROFILING OF AU-ALXGA1-XAS INTERFACES AND LPE ALXGA1-XAS-GAAS HETEROJUNCTIONS.GARNER CM; SHEN YD; KIM JS et al.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 985-988; BIBL. 15 REF.Article

NEW PHENOMENON IN THE ADSORPTION OF OXYGEN ON SILICON.GARNER CM; LINDAU I; SU CY et al.1978; PHYS. REV. LETTERS; U.S.A.; DA. 1978; VOL. 40; NO 6; PP. 403-406; BIBL. 15 REF.Article

PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTON RADIATIONCHYE PW; LINDAU I; PIANETTA P et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 10; PP. 5545-5559; BIBL. 51 REF.Article

HIGH EFFICIENCY P+-N-N+ SILICON CONCENTRATOR SOLAR CELLSNASBY RD; GARNER CM; SEXTON FW et al.1982; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1982; VOL. 6; NO 1; PP. 49-58; BIBL. 10 REF.Article

EFFECT OF GAAS OR GAXAL1-XAS OXIDE COMPOSITION ON SCHOTTKY-BARRIER BEHAVIORGARNER CM; SU CY; SAPERSTEIN WA et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3376-3382; BIBL. 18 REF.Article

PHOTOEMISSION STUDIES OF THE INITIAL STAGES OF OXIDATION OF GASB AND INPCHYE PW; SU CY; LINDAU I et al.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 88; NO 2-3; PP. 439-460; BIBL. 26 REF.Article

OXYGEN ADSORPTION AND THE SURFACE ELECTRONIC STRUCTURE OF GAAS(110).LINDAU I; PIANETTA P; SPICER WE et al.1978; J. ELECTRON. SPECTROSC. RELAT. PHENOMENA; NETHERL.; DA. 1978; VOL. 13; NO 3; PP. 155-160; BIBL. 19 REF.Article

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